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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article

Results 1-20 of 231 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Feb-2008A double-spacer I-MOS transistor with shallow source junction and lightly doped drain for reduced operating voltage and enhanced device performanceToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
2Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
3Jan-2006A fast measurement technique of MOSFET Id-Vg characteristicsShen, C.; Li, M.-F. ; Wang, X.P.; Yeo, Y.-C. ; Kwong, D.-L.
4Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
5Mar-2011A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integrationTran, X.A.; Yu, H.Y.; Yeo, Y.C. ; Wu, L.; Liu, W.J.; Wang, Z.R.; Fang, Z.; Pey, K.L.; Sun, X.W.; Du, A.Y.; Nguyen, B.Y.; Li, M.F.
6Mar-2011A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.-T.; Samudra, G. ; Yeo, Y.-C. 
72012A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETsZhang, X.; Ivana; Guo, H.X.; Gong, X.; Zhou, Q. ; Yeo, Y.-C. 
82012A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architectureTran, X.A.; Zhu, W.; Liu, W.J.; Yeo, Y.C. ; Nguyen, B.Y.; Yu, H.Y.
9Apr-2012A self-rectifying HfO x-based unipolar RRAM with Nisi electrodeTran, X.A.; Zhu, W.G.; Gao, B.; Kang, J.F.; Liu, W.J.; Fang, Z.; Wang, Z.R.; Yeo, Y.C. ; Nguyen, B.Y.; Li, M.F.; Yu, H.Y.
10Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
112008A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistorsShen, C.; Ong, S.-L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
1213-Jan-2014Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxyRichard D'Costa, V.; Wang, W.; Zhou, Q. ; Soon Tok, E. ; Yeo, Y.-C. 
13Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
142009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
15Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
162006Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenideZhu, M. ; Tung, C.-H.; Yeo, Y.-C. 
17May-2008Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulationZhao, H.; Yeo, Y.-C. ; Rustagi, S.C.; Samudra, G.S.
182014Ballistic transport performance of silicane and germanane transistorsLow, K.L.; Huang, W.; Yeo, Y.-C. ; Liang, G. 
192008Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materialsFang, L.W.-W.; Pan, J.-S.; Zhao, R.; Shi, L.; Chong, T.-C.; Samudra, G. ; Yeo, Y.-C. 
2015-Jul-2013Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopyOwen, M.H.S.; Guo, C.; Chen, S.-H.; Wan, C.-T.; Cheng, C.-C.; Wu, C.-H.; Ko, C.-H.; Wann, C.H.; Ivana; Zhang, Z.; Pan, J.S.; Yeo, Y.-C.