Please use this identifier to cite or link to this item:
|Title:||A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs||Authors:||Zhang, X.
|Issue Date:||2012||Citation:||Zhang, X., Ivana, Guo, H.X., Gong, X., Zhou, Q., Yeo, Y.-C. (2012). A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs. Journal of the Electrochemical Society 159 (5) : H511-H515. ScholarBank@NUS Repository. https://doi.org/10.1149/2.060205jes||Abstract:||A salicide-like self-aligned Ni-InGaAs contact technology suitable for InGaAs metal-oxide-semiconductor field-effect transistors has been developed. It has been confirmed that Ni film sputtered onto single crystalline InGaAs substrate is uniformly converted into Ni-InGaAs by low temperature (250-400°C) rapid thermal annealing. A comprehensive study of Ni-InGaAs contacts was performed by employing characterization of High Resolution Transmission Electron Microscopy, Energy-dispersive X-ray spectroscopy, X-Ray Diffraction and Secondary Ion Mass Spectroscopy. The electrical properties of the contacts were also characterized. Sheet resistance mapping of Ni-InGaAs thin film by microscopic 4-point probe shows a uniform sheet resistance of 21.3 Ω/□ and low resistivity of ∼96 μΩ·cm. Transfer Length Method test structure shows Ni-InGaAs has a contact resistance of 1.27 Ω·mm on n + InGaAs doped by Si + implant. This self-aligned Ni-InGaAs contact technology was then used in the experimental fabrication of InGaAs channel n-MOSFETs. Devices with self-aligned metallic Ni-InGaAs SD as well as Si-doped SD with Ni-InGaAs contacts were realized and show good electrical characteristics with on-stateoff-state drain current ratio of 10 3∼10 5. © 2012 The Electrochemical Society.||Source Title:||Journal of the Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/81907||ISSN:||00134651||DOI:||10.1149/2.060205jes|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 26, 2020
WEB OF SCIENCETM
checked on Mar 19, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.