Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.060205jes
Title: A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
Authors: Zhang, X.
Ivana
Guo, H.X.
Gong, X.
Zhou, Q. 
Yeo, Y.-C. 
Issue Date: 2012
Source: Zhang, X., Ivana, Guo, H.X., Gong, X., Zhou, Q., Yeo, Y.-C. (2012). A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs. Journal of the Electrochemical Society 159 (5) : H511-H515. ScholarBank@NUS Repository. https://doi.org/10.1149/2.060205jes
Abstract: A salicide-like self-aligned Ni-InGaAs contact technology suitable for InGaAs metal-oxide-semiconductor field-effect transistors has been developed. It has been confirmed that Ni film sputtered onto single crystalline InGaAs substrate is uniformly converted into Ni-InGaAs by low temperature (250-400°C) rapid thermal annealing. A comprehensive study of Ni-InGaAs contacts was performed by employing characterization of High Resolution Transmission Electron Microscopy, Energy-dispersive X-ray spectroscopy, X-Ray Diffraction and Secondary Ion Mass Spectroscopy. The electrical properties of the contacts were also characterized. Sheet resistance mapping of Ni-InGaAs thin film by microscopic 4-point probe shows a uniform sheet resistance of 21.3 Ω/□ and low resistivity of ∼96 μΩ·cm. Transfer Length Method test structure shows Ni-InGaAs has a contact resistance of 1.27 Ω·mm on n + InGaAs doped by Si + implant. This self-aligned Ni-InGaAs contact technology was then used in the experimental fabrication of InGaAs channel n-MOSFETs. Devices with self-aligned metallic Ni-InGaAs SD as well as Si-doped SD with Ni-InGaAs contacts were realized and show good electrical characteristics with on-stateoff-state drain current ratio of 10 3∼10 5. © 2012 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/81907
ISSN: 00134651
DOI: 10.1149/2.060205jes
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