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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2023]
Type:  Article

Results 141-160 of 236 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1412013Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregationTong, Y.; Han, G. ; Liu, B.; Yang, Y.; Wang, L.; Wang, W.; Yeo, Y.-C. 
1422008Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistorsKoh, A.T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Lai, D.M.-Y.; Chi, D.-Z.; Hoe, K.-M.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
143Sep-2010Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single maskSinha, M.; Chor, E.F. ; Yeo, Y.-C. 
144Jan-2008Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drainLee, R.T.P. ; Yang, L.-T.; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ang, K.-W.; Lai, D.M.Y.; Hoe, K.M.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
1457-Jan-2013NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier heightLim, P.S.Y.; Chi, D.Z.; Zhou, Q. ; Yeo, Y.-C. 
146Oct-2007NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectricChen, J. ; Wang, X.P.; Li, M.-F. ; Lee, S.J. ; Yu, M.B.; Shen, C.; Yeo, Y.-C. 
147Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
14825-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
149Aug-2008Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Samudra, G.; Yeo, Y.-C. 
1502008Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gatesLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
151May-2008P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performanceLee, R.T.-P. ; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1522009Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drainTan, K.-M.; Yang, M.; Fang, W.-W.; Lim, A.E.-J.; Lee, R.T.-P. ; Liow, T.-Y.; Yeo, Y.-C. 
153Nov-2007Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1542007Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineeringToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
155Oct-2009Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formationYang, J.-J.; Chen, J.-D. ; Wise, R.; Yeo, Y.-C. ; Zhu, C. 
1562013Phase change liner stressor for strain engineering of P-channel FinFETsDing, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Yeo, Y.-C. 
1572011Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technologyFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
158May-2011Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reductionFang, L.W.-W.; Zhao, R.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
1592012Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stackGyanathan, A.; Yeo, Y.-C. 
1604-Jul-2011Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47AsIvana; Pan, J.; Zhang, Z.; Zhang, X.; Guo, H.; Gong, X.; Yeo, Y.-C.