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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

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Date Issued:  [2000 TO 2023]
Type:  Article

Results 161-180 of 236 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1612009Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applicationsChen, J.-D. ; Yang, J.-J.; Wise, R.; Steinmann, P.; Yu, M.-B.; Zhu, C. ; Yeo, Y.-C. 
215-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
328-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
428-Jan-2013Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrateGoh, K.-H.; Cheng, Y.; Lu Low, K.; Yu Jin Kong, E.; Chia, C.-K.; Toh, E.-H.; Yeo, Y.-C. 
528-Jan-2013Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrateGoh, K.-H.; Cheng, Y.; Lu Low, K.; Yu Jin Kong, E.; Chia, C.-K.; Toh, E.-H.; Yeo, Y.-C. 
62009Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)Lee, R.T.P. ; Chi, D.Z.; Yeo, Y.-C. 
72015Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometryD'Costa, V.R. ; Yeo, Y.-C. 
82007Probing the ErSi1.7 Phase formation by micro-Raman spectroscopyLee, R.T.-P. ; Tan, K.-M.; Liow, T.-Y.; Ho, C.-S.; Tripathy, S.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
9May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
102007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
112011Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallizationZhang, X.; Guo, H.; Lin, H.-Y.; Ivana; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
122013Relaxed and strained patterned germanium-tin structures: A Raman scattering studyCheng, R. ; Wang, W.; Gong, X.; Sun, L.; Guo, P.; Hu, H.; Shen, Z.; Han, G. ; Yeo, Y.-C. 
1315-Mar-2011Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/GeChia, C.K.; Dalapati, G.K.; Chai, Y.; Lu, S.L.; He, W.; Dong, J.R.; Seng, D.H.L.; Hui, H.K.; Wong, A.S.W.; Lau, A.J.Y.; Cheng, Y.B.; Chi, D.Z.; Zhu, Z.; Yeo, Y.C. ; Xu, Z.; Yoon, S.F.
14Dec-2009Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETsSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
151-Oct-2011Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser annealKoh, S.-M.; Wang, X.; Thanigaivelan, T.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
16Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
172012Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drainSubramanian, S.; Ivana; Zhou, Q. ; Zhang, X.; Balakrishnan, M.; Yeo, Y.-C. 
182012Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contactsTong, Y.; Liu, B.; Lim, P.S.Y.; Yeo, Y.-C. 
19Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
20May-2011Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistorsZhang, X.; Guo, H.; Lin, H.-Y.; Cheng, C.-C.; Ko, C.-H.; Wann, C.H.; Luo, G.-L.; Chang, C.-Y.; Chien, C.-H.; Han, Z.-Y.; Huang, S.-C.; Chin, H.-C.; Gong, X.; Koh, S.-M.; Lim, P.S.Y.; Yeo, Y.-C.