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|Title:||Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications||Authors:||Chen, J.-D.
|Issue Date:||2009||Citation:||Chen, J.-D., Yang, J.-J., Wise, R., Steinmann, P., Yu, M.-B., Zhu, C., Yeo, Y.-C. (2009). Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications. IEEE Transactions on Electron Devices 56 (11) : 2683-2691. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030539||Abstract:||We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3/SiO2 laminated dielectrics featuring low quadratic voltage coefficient of capacitance (VCC) and high capacitance density for precision analog circuit applications. In comparison with a HfO2 MIM dielectric, the Sm2O3 MIM dielectric is found to show a smaller quadratic VCC and a similar dielectric constant. We also investigated the cancellation of the positive quadratic VCC of Sm2 O3 through its combination with a SiO2 layer having a negative quadratic VCC. Thus, MIM capacitors with a Sm2O3/SiO2 laminated dielectric were fabricated with various Sm2O3 and SiO2 thickness combinations. Capacitors with the Sm2O3/ SiO2 laminated dielectric exhibit tunable quadratic VCC and high capacitance density. Very low quadratic VCC at various capacitance densities were achieved. The leakage current mechanism is related to Poole-Frenkel emission at a high positive bias. A smaller quadratic VCC is obtained at higher frequencies. We also conducted an extensive physical characterization of Sm2O3 using transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. © 2009 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82905||ISSN:||00189383||DOI:||10.1109/TED.2009.2030539|
|Appears in Collections:||Staff Publications|
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