Full Name
Chunxiang Zhu
Zhu, C.-X.
Zhu, C.X.
Zhu Chunxiang
Zhu, C.

Results 1-20 of 231 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
120043D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOSYu, D.S.; Chin, A. ; Laio, C.C.; Lee, C.F.; Cheng, C.F.; Chen, W.J.; Zhu, C. ; Li, M.-F. ; Yoo, W.J. ; McAlister, S.P.; Kwong, D.L.
2Feb-2007A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applicationsYu, X.; Yu, M.; Zhu, C. 
32004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
428-Apr-2006A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moietiesLing, Q.-D. ; Song, Y.; Lim, S.-L.; Teo, E.Y.-H. ; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
5Aug-2007A flexible polymer memory deviceLi, L. ; Ling, Q.-D. ; Lim, S.-L.; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
6Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
7Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
82005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
9Dec-2005A new polysilicon CMOS self-aligned double-gate TFT technologyXiong, Z.; Liu, H.; Zhu, C. ; Sin, J.K.O.
102007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
112004A novel program-erasable capacitor using high-κ AlN dielectricLai, C.H.; Ma, M.W.; Cheng, C.F.; Chin, A.; McAlister, S.P.; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.
12Mar-2005A novel program-erasable high-k AlN-Si MIS capacitorLai, C.H.; Chin, A.; Hung, B.F.; Cheng, C.F.; Yoo, W.J. ; Li, M.F. ; Zhu, C. ; McAlister, S.P.; Kwong, D.-L.
132004A novel program-erasable high-κ AlN capacitor with memory functionChin, A. ; Lai, C.H.; Hung, B.F.; Cheng, C.F.; McAlister, S.P.; Zhu, C. ; Li, M.-F. ; Kwong, D.-L.
14Apr-2004A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacersXiong, Z.; Liu, H.; Zhu, C. ; Sin, J.K.O.
152004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
1615-Sep-2011A simple and efficient solar cell parameter extraction method from a single current-voltage curveZhang, C.; Zhang, J.; Hao, Y.; Lin, Z.; Zhu, C. 
172005A simple CMOS self-aligned double-gate poly-Si TFT technologyXiong, Z.; Liu, H.; Zhu, C. ; Sin, J.K.O.
182006A simulation study of FIBL in Ge MOSFETs with high-k gate dielectricsTan, Y.P.; James, M.-K.L.; Zhang, Q.; Wu, N.; Zhu, C. 
192007A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectricHuang, J.; Fu, J.; Zhu, C. ; Tay, A.A.O. ; Cheng, Z.-Y.; Leitz, C.W.; Lochtefeld, A.
20Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.