Please use this identifier to cite or link to this item:
Title: A novel program-erasable capacitor using high-κ AlN dielectric
Authors: Lai, C.H.
Ma, M.W.
Cheng, C.F.
Chin, A.
McAlister, S.P.
Zhu, C.X. 
Li, M.-F. 
Kwong, D.L.
Issue Date: 2004
Citation: Lai, C.H.,Ma, M.W.,Cheng, C.F.,Chin, A.,McAlister, S.P.,Zhu, C.X.,Li, M.-F.,Kwong, D.L. (2004). A novel program-erasable capacitor using high-κ AlN dielectric. Device Research Conference - Conference Digest, DRC : 77-78. ScholarBank@NUS Repository.
Abstract: We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.
Source Title: Device Research Conference - Conference Digest, DRC
ISBN: 0780382846
ISSN: 15483770
DOI: 10.1109/DRC.2004.1367791
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jun 21, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.