Please use this identifier to cite or link to this item:
|Title:||A novel program-erasable capacitor using high-κ AlN dielectric||Authors:||Lai, C.H.
|Issue Date:||2004||Citation:||Lai, C.H.,Ma, M.W.,Cheng, C.F.,Chin, A.,McAlister, S.P.,Zhu, C.X.,Li, M.-F.,Kwong, D.L. (2004). A novel program-erasable capacitor using high-κ AlN dielectric. Device Research Conference - Conference Digest, DRC : 77-78. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367791||Abstract:||We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.||Source Title:||Device Research Conference - Conference Digest, DRC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83403||ISBN:||0780382846||ISSN:||15483770||DOI:||10.1109/DRC.2004.1367791|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.