A novel program-erasable capacitor using high-κ AlN dielectric

Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367791

Title:	A novel program-erasable capacitor using high-κ AlN dielectric
Authors:	Lai, C.H. Ma, M.W. Cheng, C.F. Chin, A. McAlister, S.P. Zhu, C.X. Li, M.-F. Kwong, D.L.
Issue Date:	2004
Citation:	Lai, C.H.,Ma, M.W.,Cheng, C.F.,Chin, A.,McAlister, S.P.,Zhu, C.X.,Li, M.-F.,Kwong, D.L. (2004). A novel program-erasable capacitor using high-κ AlN dielectric. Device Research Conference - Conference Digest, DRC : 77-78. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367791
Abstract:	We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.
Source Title:	Device Research Conference - Conference Digest, DRC
URI:	http://scholarbank.nus.edu.sg/handle/10635/83403
ISBN:	0780382846
ISSN:	15483770
DOI:	10.1109/DRC.2004.1367791
Appears in Collections:	Staff Publications

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