Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367791
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dc.titleA novel program-erasable capacitor using high-κ AlN dielectric
dc.contributor.authorLai, C.H.
dc.contributor.authorMa, M.W.
dc.contributor.authorCheng, C.F.
dc.contributor.authorChin, A.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorZhu, C.X.
dc.contributor.authorLi, M.-F.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:40:50Z
dc.date.available2014-10-07T04:40:50Z
dc.date.issued2004
dc.identifier.citationLai, C.H.,Ma, M.W.,Cheng, C.F.,Chin, A.,McAlister, S.P.,Zhu, C.X.,Li, M.-F.,Kwong, D.L. (2004). A novel program-erasable capacitor using high-κ AlN dielectric. Device Research Conference - Conference Digest, DRC : 77-78. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/DRC.2004.1367791" target="_blank">https://doi.org/10.1109/DRC.2004.1367791</a>
dc.identifier.isbn0780382846
dc.identifier.issn15483770
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83403
dc.description.abstractWe demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/DRC.2004.1367791
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/DRC.2004.1367791
dc.description.sourcetitleDevice Research Conference - Conference Digest, DRC
dc.description.page77-78
dc.identifier.isiutNOT_IN_WOS
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