Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367791
Title: A novel program-erasable capacitor using high-κ AlN dielectric
Authors: Lai, C.H.
Ma, M.W.
Cheng, C.F.
Chin, A.
McAlister, S.P.
Zhu, C.X. 
Li, M.-F. 
Kwong, D.L.
Issue Date: 2004
Citation: Lai, C.H.,Ma, M.W.,Cheng, C.F.,Chin, A.,McAlister, S.P.,Zhu, C.X.,Li, M.-F.,Kwong, D.L. (2004). A novel program-erasable capacitor using high-κ AlN dielectric. Device Research Conference - Conference Digest, DRC : 77-78. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367791
Abstract: We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.
Source Title: Device Research Conference - Conference Digest, DRC
URI: http://scholarbank.nus.edu.sg/handle/10635/83403
ISBN: 0780382846
ISSN: 15483770
DOI: 10.1109/DRC.2004.1367791
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