Full Name
Li Ming-Fu
(not current staff)
Li, M.-F.
Mingfu, L.
Fu, L.M.
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.

Results 1-20 of 317 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
120043D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOSYu, D.S.; Chin, A. ; Laio, C.C.; Lee, C.F.; Cheng, C.F.; Chen, W.J.; Zhu, C. ; Li, M.-F. ; Yoo, W.J. ; McAlister, S.P.; Kwong, D.L.
2200650 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride linerAng, K.-W.; Chui, K.-J.; Chin, H.-C.; Foo, Y.-L.; Du, A.; Deng, W.; Li, M.-F. ; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
32002A 1.2 V rail-to-rail differential mode input linear CMOS transconductorXu, A.; Li, M.F. 
4Jan-1996A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutionsZhao, R.; Lau, W.S. ; Chong, T.C. ; Li, M.F. 
52004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
6Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
7Jan-2006A fast measurement technique of MOSFET Id-Vg characteristicsShen, C.; Li, M.-F. ; Wang, X.P.; Yeo, Y.-C. ; Kwong, D.-L.
8Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
9Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
102004A low voltage dual gate integrated CMOS mixer for 2.4GHZ band applicationsCui, J.; Lian, Y. ; Li, M.F. 
11Jan-2000A low-voltage CMOS OTA with rail-to-rail differential input rangeLi, M.F. ; Dasgupta, U.; Zhang, X.W.; Lim, Y.C. 
122009A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETsHuang, D.; Liu, W.J.; Liu, Z.Y.; Liao, C.C.; Zhang, L.-F.; Gan, Z.; Wong, W.; Li, M.-F. 
13Apr-2001A new CMOS buffer amplifier design used in low voltage MEMS interface circuitsHa, Y. ; Li, M.F. ; Liu, A.Q.
142005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
15Dec-2003A New Low Voltage CMOS Transconductor for VHF Filtering ApplicationsZhenying, L.; Li, M.-F. ; Lian, Y. ; Rustagi, S.C.
162007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
171997A Novel Integrated CMOS Switch Circuit for High Precision Sample-and-Hold TechniqueLi, M.F. ; Yep, S.Y.; Lim, Y.C. 
182004A novel program-erasable capacitor using high-κ AlN dielectricLai, C.H.; Ma, M.W.; Cheng, C.F.; Chin, A.; McAlister, S.P.; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.
19Mar-2005A novel program-erasable high-k AlN-Si MIS capacitorLai, C.H.; Chin, A.; Hung, B.F.; Cheng, C.F.; Yoo, W.J. ; Li, M.F. ; Zhu, C. ; McAlister, S.P.; Kwong, D.-L.
202004A novel program-erasable high-κ AlN capacitor with memory functionChin, A. ; Lai, C.H.; Hung, B.F.; Cheng, C.F.; McAlister, S.P.; Zhu, C. ; Li, M.-F. ; Kwong, D.-L.