A high performance MIM capacitor using HfO 2 dielectrics

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2002.802602

Title:	A high performance MIM capacitor using HfO 2 dielectrics
Authors:	Hu, H. Zhu, C. Lu, Y.F. Li, M.F. Cho, B.J. Choi, W.K.
Keywords:	High-κ MIM capacitor Temperature coefficient Thin-film devices Voltage linearity
Issue Date:	Sep-2002
Citation:	Hu, H., Zhu, C., Lu, Y.F., Li, M.F., Cho, B.J., Choi, W.K. (2002-09). A high performance MIM capacitor using HfO 2 dielectrics. IEEE Electron Device Letters 23 (9) : 514-516. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.802602
Abstract:	Metal-insulator-metal (MIM) capacitors with a 56-nm4hick HfO 2 high-κ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (∼200 °C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO 2 MIM capacitor can provide a higher capacitance density than Si 3N 4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 × 10 -9 A/cm 2 at 3 V is achieved. All of these make the HfO 2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81872
ISSN:	07413106
DOI:	10.1109/LED.2002.802602
Appears in Collections:	Staff Publications

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