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|Title:||A high performance MIM capacitor using HfO 2 dielectrics||Authors:||Hu, H.
|Issue Date:||Sep-2002||Citation:||Hu, H., Zhu, C., Lu, Y.F., Li, M.F., Cho, B.J., Choi, W.K. (2002-09). A high performance MIM capacitor using HfO 2 dielectrics. IEEE Electron Device Letters 23 (9) : 514-516. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.802602||Abstract:||Metal-insulator-metal (MIM) capacitors with a 56-nm4hick HfO 2 high-κ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (∼200 °C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO 2 MIM capacitor can provide a higher capacitance density than Si 3N 4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 × 10 -9 A/cm 2 at 3 V is achieved. All of these make the HfO 2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81872||ISSN:||07413106||DOI:||10.1109/LED.2002.802602|
|Appears in Collections:||Staff Publications|
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