Full Name
Cho Byung-Jin
(not current staff)
Cho, Byung Jin
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.

Results 1-20 of 151 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
12004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
2Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
3Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
4Aug-1997A mechanism of field-oxide-ungrowth phenomenon in recessed isolation process and practical solutionJang, S.-A.; Kim, Y.-B.; Cho, B.-J. ; Kim, J.-C.
52004A MONOS-type flash memory using a high-k HfAlO charge trapping layerTan, Y.N.; Chim, W.K. ; Cho, B.J. ; Choi, W.K. 
62003A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer LayerPark, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L.
72007A novel hafnium carbide (HfCx) metal gate electrode for NMOS device applicationWan, S.H.; Chen, S.; Xing, P.W.; Chan, D.S.H. ; Byung, J.C. 
82000A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stressGuan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. 
9Aug-2000A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET'sGuan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z.
102002Advanced laser applications in microelectronics and data storage devices (invited)Lu, Y.F.; Song, W.D. ; Ren, Z.M.; An, C.W.; Liu, D.M.; Wang, W.J. ; Cho, B.J. ; Zeng, J.N. ; Tan, C.F.
11Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
12May-2003An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layerPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
132003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
141-Jan-2005Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Tang, L.J.; Wu, Y.H. ; Cho, B.J. ; Xu, X.J.; Dong, J.R.; Song, W.D.
152000Annealing behavior of gate oxide leakage current after quasi-breakdownXu, Z.; Cho, B.J. ; Li, M.F. 
16Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
172008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
18Mar-2006Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsZhu, C. ; Cho, B.-J. ; Li, M.-F. 
1911-Jul-2007B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: Effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma processWhang, S.-J. ; Lee, S. ; Chi, D.-Z.; Yang, W.-F.; Cho, B.-J. ; Liew, Y.-F. ; Kwong, D.-L.
202001Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F.