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|Title:||A mechanism of field-oxide-ungrowth phenomenon in recessed isolation process and practical solution||Authors:||Jang, S.-A.
|Issue Date:||Aug-1997||Citation:||Jang, S.-A.,Kim, Y.-B.,Cho, B.-J.,Kim, J.-C. (1997-08). A mechanism of field-oxide-ungrowth phenomenon in recessed isolation process and practical solution. Journal of the Electrochemical Society 144 (8) : 2933-2940. ScholarBank@NUS Repository.||Abstract:||Field-oxide-ungrowth (FOU) phenomenon in recessed local oxidation of silicon (R-LOCOS) isolation process has been studied. Field oxidation temperature has been revealed to play a decisive role in the occurrence of FOU and nitrogen-containing polymers originated from the etching process are believed to be converted into oxidation barrier materials at a certain temperature and above. This transition temperature lies between 1000 and 1050°C, independent of the ambient in the furnace. Although field oxidation below the transition temperature can eliminate the FOU, it causes severe thinning of the field oxide at a small isolation spacing. In order to remove the FOU and at the same time to minimize the field oxide thinning, we propose a new field oxidation method which is a combination of a breakthrough field oxidation at below the transition temperature and a high temperature field oxidation.||Source Title:||Journal of the Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/54339||ISSN:||00134651|
|Appears in Collections:||Staff Publications|
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