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Joo Moon Sig

rp05929

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Full Name
Joo Moon Sig
(not current staff)
Variants
Joo, M.S.
Joo, Moon Sig
 
Main Affiliation
 
Faculty
 
Email
elejooms@nus.edu.sg
 

Publications

Results 1-18 of 18 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
2Sep-2004Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETsMathew, S.; Bera, L.K.; Balasubramanian, N.; Joo, M.S. ; Cho, B.J. 
3Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
41-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
5Sep-2004Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2Yeo, C.C.; Joo, M.S. ; Cho, B.J. ; Whang, S.J.
62001Effects of electron-beam lithography on thin gate oxide reliabilityChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S. 
78-Jul-2002Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) SiYu, H.Y. ; Li, M.F. ; Cho, B.J. ; Yeo, C.C.; Joo, M.S. ; Kwong, D.-L.; Pan, J.S.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
8Oct-2003Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD processJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Chan, D.S.H. ; Whoang, S.J.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
9Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
102004High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Ng, T.H.; Cho, B.J. 
11Nov-2003Improvement of Electrical Properties of MOCVD HfO2 by Multistep DepositionYeo, C.C.; Cho, B.J. ; Joo, M.S. ; Whoang, S.J.; Kwong, D.L.; Bera, L.K.; Mathew, S.; Balasubramanian, N.
12May-2006Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stackJoo, M.S. ; Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
131999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
141999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
15Dec-2005Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectricJoo, M.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
16Nov-2004Thermal instability of effective work function in metal/high-κ stack and its material dependenceJoo, M.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
17Nov-2004Thermal instability of effective work function in metal/high-κ stack and its material dependenceJoo, M.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
18Sep-2004Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 filmBalasubramanian, M.; Bera, L.K. ; Mathew, S.; Balasubramanian, N. ; Lim, V.; Joo, M.S. ; Cho, B.J.