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Whang Sung Jin

rp05698

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Full Name
Whang Sung Jin
(not current staff)
Variants
Whang, S.J.
Whang, S.
Whang, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elewsj@nus.edu.sg
 

Publications

Results 1-17 of 17 (Search time: 0.023 seconds).

Issue DateTitleAuthor(s)
111-Jul-2007B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: Effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma processWhang, S.-J. ; Lee, S. ; Chi, D.-Z.; Yang, W.-F.; Cho, B.-J. ; Liew, Y.-F. ; Kwong, D.-L.
22007Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F. ; Kwong, D.L. 
32007Doping of Al-catalyzed vapor-liquid-solid grown Si nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Zhu, H.C.; Gu, H.L.; Cho, B.J. ; Liew, Y.F. 
410-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
54-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
62006GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stackGao, F.; Lee, S.J. ; Li, R.; Whang, S.J. ; Balakumar, S.; Chi, D.Z.; Kean, C.C.; Vicknesh, S.; Tung, C.H.; Kwong, D.-L.
72004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.
82007High quality single crystal Al-catalyzed Si nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.; Cho, B.J. ; Liew, Y.F.; Li, K.; Bera, L.K.; Kwong, D.L.
92008In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistorsChin, H.-C.; Zhu, M. ; Whang, S.-J. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
10Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
112004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
12May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
132007Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectricsYang, W.; Whang, S. ; Lee, S. ; Zhu, H.; Gu, H.; Cho, B. 
142007Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport propertiesWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Kwong, D.L.
152007Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F.; Kwong, D.L.
16Apr-2009Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxidesSun, Z.-Q.; Whang, S.-J. ; Yang, W.-F.; Lee, S.-J. 
172003Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS DevicesYu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.