Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1737057

Title:	Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate
Authors:	Wu, N. Zhang, Q. Zhu, C. Yeo, C.C. Whang, S.J. Chan, D.S.H. Li, M.F. Cho, B.J. Chin, A. Kwong, D.-L. Du, A.Y. Tung, C.H. Balasubramanian, N.
Issue Date:	10-May-2004
Citation:	Wu, N., Zhang, Q., Zhu, C., Yeo, C.C., Whang, S.J., Chan, D.S.H., Li, M.F., Cho, B.J., Chin, A., Kwong, D.-L., Du, A.Y., Tung, C.H., Balasubramanian, N. (2004-05-10). Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate. Applied Physics Letters 84 (19) : 3741-3743. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1737057
Abstract:	Metalorganic-chemical-vapor deposited HfO 2 and TaN was used to fabricate metal-oxide-semiconductor capacitors on germanium substrates. It was demonstrated that a significant improvement in gate leakage current and equivalent oxide thickness (EOT) could be achieved by using surface annealing step in NH 3 ambient before HfO 2 deposition. It was also demonstrated that it was possible to fabricate a capacitor with an EOT of 10.5 Å and a leakage current of 5.02×10 -5 A/cm 2 at i V gate bias. The presence of Ge within the HfO 2 films, which might be due to Ge diffusion at the high temperature used in the chemical vapor deposition process was demonstrated.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82213
ISSN:	00036951
DOI:	10.1063/1.1737057
Appears in Collections:	Staff Publications

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