Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1737057
Title: Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate
Authors: Wu, N.
Zhang, Q.
Zhu, C. 
Yeo, C.C.
Whang, S.J. 
Chan, D.S.H. 
Li, M.F. 
Cho, B.J. 
Chin, A.
Kwong, D.-L.
Du, A.Y.
Tung, C.H.
Balasubramanian, N.
Issue Date: 10-May-2004
Source: Wu, N., Zhang, Q., Zhu, C., Yeo, C.C., Whang, S.J., Chan, D.S.H., Li, M.F., Cho, B.J., Chin, A., Kwong, D.-L., Du, A.Y., Tung, C.H., Balasubramanian, N. (2004-05-10). Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate. Applied Physics Letters 84 (19) : 3741-3743. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1737057
Abstract: Metalorganic-chemical-vapor deposited HfO 2 and TaN was used to fabricate metal-oxide-semiconductor capacitors on germanium substrates. It was demonstrated that a significant improvement in gate leakage current and equivalent oxide thickness (EOT) could be achieved by using surface annealing step in NH 3 ambient before HfO 2 deposition. It was also demonstrated that it was possible to fabricate a capacitor with an EOT of 10.5 Å and a leakage current of 5.02×10 -5 A/cm 2 at i V gate bias. The presence of Ge within the HfO 2 films, which might be due to Ge diffusion at the high temperature used in the chemical vapor deposition process was demonstrated.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82213
ISSN: 00036951
DOI: 10.1063/1.1737057
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

144
checked on Feb 21, 2018

WEB OF SCIENCETM
Citations

138
checked on Jan 15, 2018

Page view(s)

28
checked on Feb 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.