Please use this identifier to cite or link to this item:
|Title:||Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate|
|Citation:||Wu, N., Zhang, Q., Zhu, C., Yeo, C.C., Whang, S.J., Chan, D.S.H., Li, M.F., Cho, B.J., Chin, A., Kwong, D.-L., Du, A.Y., Tung, C.H., Balasubramanian, N. (2004-05-10). Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate. Applied Physics Letters 84 (19) : 3741-3743. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1737057|
|Abstract:||Metalorganic-chemical-vapor deposited HfO 2 and TaN was used to fabricate metal-oxide-semiconductor capacitors on germanium substrates. It was demonstrated that a significant improvement in gate leakage current and equivalent oxide thickness (EOT) could be achieved by using surface annealing step in NH 3 ambient before HfO 2 deposition. It was also demonstrated that it was possible to fabricate a capacitor with an EOT of 10.5 Å and a leakage current of 5.02×10 -5 A/cm 2 at i V gate bias. The presence of Ge within the HfO 2 films, which might be due to Ge diffusion at the high temperature used in the chemical vapor deposition process was demonstrated.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 20, 2019
WEB OF SCIENCETM
checked on Mar 5, 2019
checked on Feb 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.