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|Title:||Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate|
|Citation:||Wu, N., Zhang, Q., Zhu, C., Yeo, C.C., Whang, S.J., Chan, D.S.H., Li, M.F., Cho, B.J., Chin, A., Kwong, D.-L., Du, A.Y., Tung, C.H., Balasubramanian, N. (2004-05-10). Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate. Applied Physics Letters 84 (19) : 3741-3743. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1737057|
|Abstract:||Metalorganic-chemical-vapor deposited HfO 2 and TaN was used to fabricate metal-oxide-semiconductor capacitors on germanium substrates. It was demonstrated that a significant improvement in gate leakage current and equivalent oxide thickness (EOT) could be achieved by using surface annealing step in NH 3 ambient before HfO 2 deposition. It was also demonstrated that it was possible to fabricate a capacitor with an EOT of 10.5 Å and a leakage current of 5.02×10 -5 A/cm 2 at i V gate bias. The presence of Ge within the HfO 2 films, which might be due to Ge diffusion at the high temperature used in the chemical vapor deposition process was demonstrated.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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