Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1737057
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dc.titleEffect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate
dc.contributor.authorWu, N.
dc.contributor.authorZhang, Q.
dc.contributor.authorZhu, C.
dc.contributor.authorYeo, C.C.
dc.contributor.authorWhang, S.J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLi, M.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorDu, A.Y.
dc.contributor.authorTung, C.H.
dc.contributor.authorBalasubramanian, N.
dc.date.accessioned2014-10-07T04:26:43Z
dc.date.available2014-10-07T04:26:43Z
dc.date.issued2004-05-10
dc.identifier.citationWu, N., Zhang, Q., Zhu, C., Yeo, C.C., Whang, S.J., Chan, D.S.H., Li, M.F., Cho, B.J., Chin, A., Kwong, D.-L., Du, A.Y., Tung, C.H., Balasubramanian, N. (2004-05-10). Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate. Applied Physics Letters 84 (19) : 3741-3743. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1737057
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82213
dc.description.abstractMetalorganic-chemical-vapor deposited HfO 2 and TaN was used to fabricate metal-oxide-semiconductor capacitors on germanium substrates. It was demonstrated that a significant improvement in gate leakage current and equivalent oxide thickness (EOT) could be achieved by using surface annealing step in NH 3 ambient before HfO 2 deposition. It was also demonstrated that it was possible to fabricate a capacitor with an EOT of 10.5 Å and a leakage current of 5.02×10 -5 A/cm 2 at i V gate bias. The presence of Ge within the HfO 2 films, which might be due to Ge diffusion at the high temperature used in the chemical vapor deposition process was demonstrated.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1737057
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1737057
dc.description.sourcetitleApplied Physics Letters
dc.description.volume84
dc.description.issue19
dc.description.page3741-3743
dc.description.codenAPPLA
dc.identifier.isiut000221210100007
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