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|Title:||Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire||Authors:||Whang, S.J.
|Issue Date:||2007||Citation:||Whang, S.J., Lee, S.J., Yang, W.F., Cho, B.J., Liew, Y.F., Kwong, D.L. (2007). Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire. 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings : 45-48. ScholarBank@NUS Repository. https://doi.org/10.1109/NANO.2007.4601137||Abstract:||We present a successful synthesis of single crystalline homogeneous Si 1-xGex nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using backgated field effect transistor integrated with HfO2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si1-xGex nanowire transistor exhibits p-MOS operation with Ion/Ioff ∼ 104, sub-threshold swing of 97 mV/dec. © 2007 IEEE.||Source Title:||2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/84266||ISBN:||1424406080||DOI:||10.1109/NANO.2007.4601137|
|Appears in Collections:||Staff Publications|
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