Full Name
ZHU MING
Variants
Zhu, M.
 
 
 
Email
nnizm@nus.edu.sg
 

Publications

Results 1-20 of 29 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
120085 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation techniqueLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
2Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
32007A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistorsTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
42008A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stackChin, H.-C.; Zhu, M. ; Lee, Z.-C.; Liu, X.; Tan, K.-M.; Lee, H.K.; Shi, L. ; Tang, L.-J.; Tung, C.-H. ; Lo, G.-Q.; Tan, L.-S. ; Yeo, Y.-C. 
52008A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancementLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Tan, B.L.H.; Tripathy, S.; Oh, S.-A.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
6Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
72006Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenideZhu, M. ; Tung, C.-H.; Yeo, Y.-C. 
82008Epitaxial growth of single crystalline Ge films on GaAs substrates for CMOS device integrationChin, H.-C.; Zhu, M. ; Samudra, G. ; Yeo, Y.-C. 
92008Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n -channel metal-oxide-semiconductor field effect transistor applicationsZhu, M. ; Chin, H.-C.; Samudra, G.S. ; Yeo, Y.-C. 
102008Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor depositionZhu, M. ; Chin, H.-C.; Samudra, G.S. ; Yeo, Y.-C. 
11Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
122007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
132007In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applicationsZhu, M. ; Chin, H.-C.; Tung, C.-H.; Yeo, Y.-C. 
14Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
152008In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistorsChin, H.-C.; Zhu, M. ; Whang, S.-J. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
16Aug-2008Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETsLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Yeo, Y.-C. 
172008N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivationChin, H.-C.; Zhu, M. ; Samudra, G.S. ; Yeo, Y.-C. 
1825-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
192008P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swingToh, E.-H.; Wang, G.H.; Weeks, D.; Zhu, M. ; Bauer, M.; Spear, J.; Chan, L.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
20Jun-2007Preparation and investigation of GOI material by using smart-cut technologyZhan, D.; Ma, X.-B.; Liu, W.-L.; Zhu, M. ; Song, Z.-T.