Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
 
 
Email
eletanls@nus.edu.sg
 

Publications

Results 1-20 of 116 (Search time: 0.01 seconds).

Issue DateTitleAuthor(s)
1Oct-1977A multilayer correction scheme for spreading resistance measurementsChoo, S.C. ; Leong, M.S. ; Hong, H.L.; Li, L.; Tan, L.S. 
22008A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stackChin, H.-C.; Zhu, M. ; Lee, Z.-C.; Liu, X.; Tan, K.-M.; Lee, H.K.; Shi, L. ; Tang, L.-J.; Tung, C.-H. ; Lo, G.-Q.; Tan, L.-S. ; Yeo, Y.-C. 
32004Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealingTan, L.S. ; Wang, H.T.; Chor, E.F. 
42000Activation of beryllium-implanted GaN by two-step annealingSun, Y.; Tan, L.S. ; Chua, S.J. ; Prakash, S. 
52000Activation of beryllium-implanted GaN by two-step annealingSun, Yuejun; Tan, Leng Seow ; Chua, Soo Jin ; Prakash, Savarimuthu 
626-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
7Apr-2013AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free processLiu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
8Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
92012AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Teo, K.L. ; Chen, K.J.; Yeo, Y.-C. 
10Sep-2002Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorptionCheah, C.W.; Karunasiri, G.; Tan, L.S. 
11Apr-1993Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, L.S. 
1215-Apr-2002Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III-V semiconductor Γ quantum wellsCheah, C.W.; Tan, L.S. ; Karunasiri, G.
13Mar-1997Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substratesPhua, C.C.; Chong, T.C. ; Lau, W.S. ; Zhao, R.; Lu, D. ; Goo, C.H.; Tan, L.S. 
142010Asymmetrical magneto-impedance effect in NiFe/SiO2/Cu composite wire with a sputtered NiFe seed layerFan, J. ; Ning, N. ; Yi, J.B. ; Tan, L.S. ; Li, X.P. 
152015Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivationLiu, X.; Liu, Z. ; Pannirselvam, S. ; Pan, J.; Liu, W.; Jia, F.; Lu, Y.; Liu, C.; Yu, W.; He, J.; Tan, L.S. 
162007Band offset measurements of the pulsed-laser-deposition-grown Sc 2O3 (111)/GaN (0001) heterostructure by X-ray photoelectron spectroscopyLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
172004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
183-Jul-1997Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulatorRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. 
191-Nov-1991Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current techniqueLau, Wai Shing ; Chong, Tow Chong ; Tan, Leng Seow ; Goo, Chuen Hang; Goh, Kian Seng
20Jan-2002Characterization of ultrashallow dopant profiles using spreading resistance profilingTan, L.S. ; Tan, L.C.P.; Leong, M.S. ; Mazur, R.G.; Ye, C.W.