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|Title:||AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process||Authors:||Liu, X.
Wai Chan, K.
Samuel Owen, M.H.
|Issue Date:||Apr-2013||Citation:||Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2013-04). AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process. Japanese Journal of Applied Physics 52 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.52.04CF06||Abstract:||This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L GDof 20 μm achieved an off-state breakdown voltage V BRof 1400 V and an on-state resistance Ron of 22mω cm 2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of ∼109 and low gate leakage current IG of ∼10-11 A/mm were also obtained. © 2013 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83449||ISSN:||00214922||DOI:||10.7567/JJAP.52.04CF06|
|Appears in Collections:||Staff Publications|
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