AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process

Abstract

This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L GDof 20 μm achieved an off-state breakdown voltage V BRof 1400 V and an on-state resistance Ron of 22mω cm 2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of ∼109 and low gate leakage current IG of ∼10-11 A/mm were also obtained. © 2013 The Japan Society of Applied Physics.