Full Name
Lau Wai Shing
Variants
Lau, W.S.
Lau, Wai Shing
 
 
 

Publications

Results 1-20 of 47 (Search time: 0.01 seconds).

Issue DateTitleAuthor(s)
1May-1996A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopyLau, W.S. ; Khaw, K.K.; Qian, P.W.; Sandler, N.P.; Chu, P.K.
2Jan-1996A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutionsZhao, R.; Lau, W.S. ; Chong, T.C. ; Li, M.F. 
3Mar-1997Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substratesPhua, C.C.; Chong, T.C. ; Lau, W.S. ; Zhao, R.; Lu, D. ; Goo, C.H.; Tan, L.S. 
43-Jul-1997Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulatorRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. 
5Feb-1995Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applicationsLau, Wai Shing ; Tan, Thiam Siew; Sandler, Nathan P.; Page, Barry S.
61-Nov-1991Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current techniqueLau, Wai Shing ; Chong, Tow Chong ; Tan, Leng Seow ; Goo, Chuen Hang; Goh, Kian Seng
71-Dec-1991Confirmation of the correlation between the electrical hysteresis and silicon dangling bond density in silicon nitride by UV irradiation of nearly hysteresis free metal-nitride-silicon capacitorsLau, W.S. ; Goo, C.H.
81997Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructuresDu, A.Y.; Li, M.F. ; Chong, T.C. ; Teo, K.L. ; Lau, W.S. 
91-Jun-1996Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrateLau, W.S. ; Khaw, K.K.; Qian, P.W.; Sandler, N.P.; Chu, P.K.
1028-Jul-1997Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopyLau, W.S. ; Zhong, L.; Lee, A.; See, C.H.; Han, T.; Sandier, N.P.; Chong, T.C. 
114-Nov-1996Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructuresDu, A.Y.; Li, M.F. ; Chong, T.C. ; Teo, K.L. ; Lau, W.S. ; Zhang, Z.
121999Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETsRao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. 
131994Effects of low-temperature grown GaAs intermediate layers on the crystalline quality of GaAs-ON-Si epilayersChong, T.C. ; Phua, C.C.; Lau, W.S. ; Tan, L.S. 
141999Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parametersRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
151997Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitorsLau, W.S. ; Qian, P.W.; Sandler, N.P.; McKinley, K.A.; Chu, P.K.
161996High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxyGoo, C.H.; Lau, W.S. ; Chong, T.C. ; Tan, L.S. ; Chu, P.K.
17May-1990Identification and suppression of defects responsible for electrical hysteresis in metal-nitride-silicon capacitorsLau, W.S. 
181994Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layerPhua, Cheng Chiang; Chong, Tow Chong ; Lau, Wai Shing 
191994Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layerPhua, Cheng Chiang; Chong, Tow Chong ; Lau, Wai Shing 
2015-Oct-1998Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layersRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Geng, C. ; Lim, N.