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|Title:||Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures||Authors:||Du, A.Y.
|Issue Date:||1997||Citation:||Du, A.Y.,Li, M.F.,Chong, T.C.,Teo, K.L.,Lau, W.S. (1997). Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures. International Symposium on IC Technology, Systems and Applications 7 : 239-242. ScholarBank@NUS Repository.||Abstract:||Dislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM) and Deep Level Transient Spectroscopy (DLTS). The XTEM and DLTS results are consistent with each other. The threading dislocations in bulk layers introduce three hole trap levels HI, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap E1 with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67-0.73 eV.||Source Title:||International Symposium on IC Technology, Systems and Applications||URI:||http://scholarbank.nus.edu.sg/handle/10635/72554|
|Appears in Collections:||Staff Publications|
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