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|Title:||Effects of low-temperature grown GaAs intermediate layers on the crystalline quality of GaAs-ON-Si epilayers||Authors:||Chong, T.C.
|Issue Date:||1994||Citation:||Chong, T.C.,Phua, C.C.,Lau, W.S.,Tan, L.S. (1994). Effects of low-temperature grown GaAs intermediate layers on the crystalline quality of GaAs-ON-Si epilayers. Materials Research Society Symposium - Proceedings 340 : 393-398. ScholarBank@NUS Repository.||Abstract:||The incorporation of low-temperature (LT) GaAs intermediate layers grown at 230°C had been shown to have the effects of improving the crystalline quality of GaAs epilayers on Si. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images. The dominant deep level electron trap in the LT-GaAs epilayer grown on Si substrate was the same as that found in LT-GaAs epilayer grown on GaAs substrate.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/72600||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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