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|Title:||A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions||Authors:||Zhao, R.
Wet selective etching
|Issue Date:||Jan-1996||Citation:||Zhao, R.,Lau, W.S.,Chong, T.C.,Li, M.F. (1996-01). A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (1 A) : 22-25. ScholarBank@NUS Repository.||Abstract:||In this work we report the selective etching characteristics of GaAs grown by molecular beam epitaxy over AlAs etch-stop layer in four etching solutions. We show that these solutions, which are commonly used for selective etching of GaAs grown at the conventional temperature of 600°C (HT GaAs) are also effective for low-temperature GaAs grown at 230°C with annealing at 600e°C (a-LT GaAs) and low-temperature-grown GaAs without annealing (LT GaAs). In these solutions, the etching rates of LT GaAs and a-LT GaAs are lower than that of HT GaAs and hence the selectivities of LT GaAs and a-LT GaAs over AlAs are lower than that of HT GaAs over AlAs. The succinic acid/H2O2 solution with pH = 4.2 was found to be the best selective etchant. Furthermore, we observed, for the first time, that the AlAs etch-stop layer tended to fail at the periphery of the etched windows, resulting in void formation if the etching was excessive. It took a longer time for this to happen in the succinic acid/H2O2 solution than in other solutions investigated.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/81814||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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