Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81814
Title: A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions
Authors: Zhao, R.
Lau, W.S. 
Chong, T.C. 
Li, M.F. 
Keywords: AlAs
GaAs
LT GaAs
Wet selective etching
Issue Date: Jan-1996
Citation: Zhao, R.,Lau, W.S.,Chong, T.C.,Li, M.F. (1996-01). A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (1 A) : 22-25. ScholarBank@NUS Repository.
Abstract: In this work we report the selective etching characteristics of GaAs grown by molecular beam epitaxy over AlAs etch-stop layer in four etching solutions. We show that these solutions, which are commonly used for selective etching of GaAs grown at the conventional temperature of 600°C (HT GaAs) are also effective for low-temperature GaAs grown at 230°C with annealing at 600e°C (a-LT GaAs) and low-temperature-grown GaAs without annealing (LT GaAs). In these solutions, the etching rates of LT GaAs and a-LT GaAs are lower than that of HT GaAs and hence the selectivities of LT GaAs and a-LT GaAs over AlAs are lower than that of HT GaAs over AlAs. The succinic acid/H2O2 solution with pH = 4.2 was found to be the best selective etchant. Furthermore, we observed, for the first time, that the AlAs etch-stop layer tended to fail at the periphery of the etched windows, resulting in void formation if the etching was excessive. It took a longer time for this to happen in the succinic acid/H2O2 solution than in other solutions investigated.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/81814
ISSN: 00214922
Appears in Collections:Staff Publications

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