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|Title:||A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy||Authors:||Lau, W.S.
|Keywords:||Chemical vapor deposition (CVD)
Nitrous oxide (N2O)
Rapid thermal annealing (RTA)
Tantalum pentoxide (Ta2O5)
Thermally stimulated currrent (TSC)
|Issue Date:||May-1996||Citation:||Lau, W.S.,Khaw, K.K.,Qian, P.W.,Sandler, N.P.,Chu, P.K. (1996-05). A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (5 SUPPL. A) : 2599-2604. ScholarBank@NUS Repository.||Abstract:||The concentration of shallow defect states in Ta2O5 films was found to be greatly reduced, resulting in much less leakage current in Al/Ta2O5/Si capacitors, if N2O was used instead of O2 for post-deposition annealing. The superiority of N2O is explained by the formation of a slightly thicker SiOx diffusion barrier, which can reduce Si contamination coming from the Si substrate into the Ta2O5 film.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/81813||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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