Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81813
Title: A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
Authors: Lau, W.S. 
Khaw, K.K.
Qian, P.W.
Sandler, N.P.
Chu, P.K.
Keywords: Chemical vapor deposition (CVD)
Defect states
Leakage current
Nitrous oxide (N2O)
Oxygen
Rapid thermal annealing (RTA)
Tantalum pentoxide (Ta2O5)
Thermally stimulated currrent (TSC)
Traps
Issue Date: May-1996
Citation: Lau, W.S.,Khaw, K.K.,Qian, P.W.,Sandler, N.P.,Chu, P.K. (1996-05). A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (5 SUPPL. A) : 2599-2604. ScholarBank@NUS Repository.
Abstract: The concentration of shallow defect states in Ta2O5 films was found to be greatly reduced, resulting in much less leakage current in Al/Ta2O5/Si capacitors, if N2O was used instead of O2 for post-deposition annealing. The superiority of N2O is explained by the formation of a slightly thicker SiOx diffusion barrier, which can reduce Si contamination coming from the Si substrate into the Ta2O5 film.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/81813
ISSN: 00214922
Appears in Collections:Staff Publications

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