Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81813
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dc.titleA comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
dc.contributor.authorLau, W.S.
dc.contributor.authorKhaw, K.K.
dc.contributor.authorQian, P.W.
dc.contributor.authorSandler, N.P.
dc.contributor.authorChu, P.K.
dc.date.accessioned2014-10-07T03:12:18Z
dc.date.available2014-10-07T03:12:18Z
dc.date.issued1996-05
dc.identifier.citationLau, W.S.,Khaw, K.K.,Qian, P.W.,Sandler, N.P.,Chu, P.K. (1996-05). A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (5 SUPPL. A) : 2599-2604. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81813
dc.description.abstractThe concentration of shallow defect states in Ta2O5 films was found to be greatly reduced, resulting in much less leakage current in Al/Ta2O5/Si capacitors, if N2O was used instead of O2 for post-deposition annealing. The superiority of N2O is explained by the formation of a slightly thicker SiOx diffusion barrier, which can reduce Si contamination coming from the Si substrate into the Ta2O5 film.
dc.sourceScopus
dc.subjectChemical vapor deposition (CVD)
dc.subjectDefect states
dc.subjectLeakage current
dc.subjectNitrous oxide (N2O)
dc.subjectOxygen
dc.subjectRapid thermal annealing (RTA)
dc.subjectTantalum pentoxide (Ta2O5)
dc.subjectThermally stimulated currrent (TSC)
dc.subjectTraps
dc.typeReview
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume35
dc.description.issue5 SUPPL. A
dc.description.page2599-2604
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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