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|Title:||Identification and suppression of defects responsible for electrical hysteresis in metal-nitride-silicon capacitors||Authors:||Lau, W.S.||Issue Date:||May-1990||Citation:||Lau, W.S. (1990-05). Identification and suppression of defects responsible for electrical hysteresis in metal-nitride-silicon capacitors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 29 (5) : 690-693. ScholarBank@NUS Repository.||Abstract:||An attempt was made to correlate the hysteresis in high frequency capacitance-voltage (C-V) measurements on metal-nitride-silicon (MNS) capacitors and spin density measured by electron spin resonance (ESR) spectrometry on a series of silicon-rich and nitrogen-rich silicon nitride films deposited by plasma enhanced chemical vapor deposition (PECVD). We found that the hysteresis ΔVH in the C-V characteristics can be divided into ΔV+, which corresponds to negative charge trapping, and ΔV-, which corresponds to positive charge trapping. A one-to-one correlation was found between ΔV+ and the spin density attributed to the silicon dangling bond. The observations support the hypothesis that besides the silicon dangling bond, which can be suppressed by using nitrogen-rich films instead of silicon-rich films, there is another important type of defect probably at the nitride-silicon interface, which can be suppressed by an appropriate ammonia plasma treatment.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/80555||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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