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|Title:||Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers||Authors:||Rao, R.V.V.V.J.
|Issue Date:||15-Oct-1998||Citation:||Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Geng, C.,Lim, N. (1998-10-15). Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers. Electronics Letters 34 (21) : 2066-2067. ScholarBank@NUS Repository.||Abstract:||Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al0.3Ga0.7As samples and a 500Å thick LT-GaAs sample exhibited 1/f noise. The noise parameter αlatt was found to be of the order 10-4 for these samples. 2000Å LT-GaAs samples exhibited 1/f3/2 noise with 500Hz corner frequency.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80687||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
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