Please use this identifier to cite or link to this item:
|Title:||Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator||Authors:||Rao, R.V.V.V.J.
|Keywords:||Field effect transistors
|Issue Date:||3-Jul-1997||Citation:||Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Lim, N. (1997-07-03). Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator. Electronics Letters 33 (14) : 1258-1260. ScholarBank@NUS Repository.||Abstract:||Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. An LT-Al0.3Ga0.7As MISFET, having a gate length of 2 μm, exhibited a transconductance of 161mS/mm, an IDSS of 320mA/mm and a maximum drain voltage of 44.7V, resulting in an I-V product of 1.65W/mm; it displayed improved frequency dispersion characteristics over that of an LT-GaAs MISFET.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80317||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 27, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.