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|Title:||Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy||Authors:||Lau, W.S.
|Issue Date:||28-Jul-1997||Citation:||Lau, W.S.,Zhong, L.,Lee, A.,See, C.H.,Han, T.,Sandier, N.P.,Chong, T.C. (1997-07-28). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters 71 (4) : 500-502. ScholarBank@NUS Repository.||Abstract:||Defect states responsible for leakage current in ultrathin (physical thickness||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80355||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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