Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates

Abstract

The application of a semiconducting low temperature grown GaAs (LT-GaAs) intermediate layer in laser diodes grown on Si by molecular beam epitaxy (MBE) reduces the threshold currents to half of that obtained in the sample without the semiconducting LT-GaAs intermediate layer. Furthermore, the emission spectra of the sample with the semiconducting LT-GaAs intermediate layer were predominantly single mode at and near the threshold currents, as compared to the multimode operation in the sample without the semiconducting LT-GaAs intermediate layer.