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|Title:||Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates||Authors:||Phua, C.C.
|Keywords:||GaAs on Si
Low temperature GaAs
Molecular beam epitaxy
|Issue Date:||Mar-1997||Citation:||Phua, C.C.,Chong, T.C.,Lau, W.S.,Zhao, R.,Lu, D.,Goo, C.H.,Tan, L.S. (1997-03). Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (3 SUPPL. B) : 1888-1891. ScholarBank@NUS Repository.||Abstract:||The application of a semiconducting low temperature grown GaAs (LT-GaAs) intermediate layer in laser diodes grown on Si by molecular beam epitaxy (MBE) reduces the threshold currents to half of that obtained in the sample without the semiconducting LT-GaAs intermediate layer. Furthermore, the emission spectra of the sample with the semiconducting LT-GaAs intermediate layer were predominantly single mode at and near the threshold currents, as compared to the multimode operation in the sample without the semiconducting LT-GaAs intermediate layer.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/50532||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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