Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/50532
DC Field | Value | |
---|---|---|
dc.title | Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates | |
dc.contributor.author | Phua, C.C. | |
dc.contributor.author | Chong, T.C. | |
dc.contributor.author | Lau, W.S. | |
dc.contributor.author | Zhao, R. | |
dc.contributor.author | Lu, D. | |
dc.contributor.author | Goo, C.H. | |
dc.contributor.author | Tan, L.S. | |
dc.date.accessioned | 2014-04-23T02:58:55Z | |
dc.date.available | 2014-04-23T02:58:55Z | |
dc.date.issued | 1997-03 | |
dc.identifier.citation | Phua, C.C.,Chong, T.C.,Lau, W.S.,Zhao, R.,Lu, D.,Goo, C.H.,Tan, L.S. (1997-03). Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (3 SUPPL. B) : 1888-1891. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00214922 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/50532 | |
dc.description.abstract | The application of a semiconducting low temperature grown GaAs (LT-GaAs) intermediate layer in laser diodes grown on Si by molecular beam epitaxy (MBE) reduces the threshold currents to half of that obtained in the sample without the semiconducting LT-GaAs intermediate layer. Furthermore, the emission spectra of the sample with the semiconducting LT-GaAs intermediate layer were predominantly single mode at and near the threshold currents, as compared to the multimode operation in the sample without the semiconducting LT-GaAs intermediate layer. | |
dc.source | Scopus | |
dc.subject | GaAs on Si | |
dc.subject | Laser diodes | |
dc.subject | Low temperature GaAs | |
dc.subject | Molecular beam epitaxy | |
dc.type | Article | |
dc.contributor.department | INSTITUTE OF MICROELECTRONICS | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | |
dc.description.volume | 36 | |
dc.description.issue | 3 SUPPL. B | |
dc.description.page | 1888-1891 | |
dc.description.coden | JAPND | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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