Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/50532
Title: Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates
Authors: Phua, C.C.
Chong, T.C. 
Lau, W.S. 
Zhao, R.
Lu, D. 
Goo, C.H.
Tan, L.S. 
Keywords: GaAs on Si
Laser diodes
Low temperature GaAs
Molecular beam epitaxy
Issue Date: Mar-1997
Source: Phua, C.C.,Chong, T.C.,Lau, W.S.,Zhao, R.,Lu, D.,Goo, C.H.,Tan, L.S. (1997-03). Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (3 SUPPL. B) : 1888-1891. ScholarBank@NUS Repository.
Abstract: The application of a semiconducting low temperature grown GaAs (LT-GaAs) intermediate layer in laser diodes grown on Si by molecular beam epitaxy (MBE) reduces the threshold currents to half of that obtained in the sample without the semiconducting LT-GaAs intermediate layer. Furthermore, the emission spectra of the sample with the semiconducting LT-GaAs intermediate layer were predominantly single mode at and near the threshold currents, as compared to the multimode operation in the sample without the semiconducting LT-GaAs intermediate layer.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/50532
ISSN: 00214922
Appears in Collections:Staff Publications

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