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|Title:||Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates|
|Keywords:||GaAs on Si|
Low temperature GaAs
Molecular beam epitaxy
|Citation:||Phua, C.C.,Chong, T.C.,Lau, W.S.,Zhao, R.,Lu, D.,Goo, C.H.,Tan, L.S. (1997-03). Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (3 SUPPL. B) : 1888-1891. ScholarBank@NUS Repository.|
|Abstract:||The application of a semiconducting low temperature grown GaAs (LT-GaAs) intermediate layer in laser diodes grown on Si by molecular beam epitaxy (MBE) reduces the threshold currents to half of that obtained in the sample without the semiconducting LT-GaAs intermediate layer. Furthermore, the emission spectra of the sample with the semiconducting LT-GaAs intermediate layer were predominantly single mode at and near the threshold currents, as compared to the multimode operation in the sample without the semiconducting LT-GaAs intermediate layer.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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