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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

Results 1-20 of 85 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Oct-1977A multilayer correction scheme for spreading resistance measurementsChoo, S.C. ; Leong, M.S. ; Hong, H.L.; Li, L.; Tan, L.S. 
226-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
3Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
4Sep-2002Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorptionCheah, C.W.; Karunasiri, G.; Tan, L.S. 
5Apr-1993Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, L.S. 
615-Apr-2002Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III-V semiconductor Γ quantum wellsCheah, C.W.; Tan, L.S. ; Karunasiri, G.
7Mar-1997Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substratesPhua, C.C.; Chong, T.C. ; Lau, W.S. ; Zhao, R.; Lu, D. ; Goo, C.H.; Tan, L.S. 
82015Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivationLiu, X.; Liu, Z. ; Pannirselvam, S. ; Pan, J.; Liu, W.; Jia, F.; Lu, Y.; Liu, C.; Yu, W.; He, J.; Tan, L.S. 
92004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
103-Jul-1997Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulatorRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. 
111-Nov-1991Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current techniqueLau, Wai Shing ; Chong, Tow Chong ; Tan, Leng Seow ; Goo, Chuen Hang; Goh, Kian Seng
12Jul-1988Contact resistance calculations based on a variational methodLeong, M.S. ; Choo, S.C. ; Tan, L.S. ; Goh, T.L.
131999Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage techniqueTan, L.S. ; Huynh, F.N.L.
142005Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealingPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Du, A.Y.
151999Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETsRao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. 
1626-Mar-2007Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-GanLim, J.; Chor, E.F. ; Tan, L.S. 
171-May-2009Effects of femtosecond laser ablation on Vitrovac 6025XTan, L.S. ; Seet, H.L. ; Hong, M.H. ; Li, X.P. 
1815-Mar-2000Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide filmsChoi, W.K. ; Chong, N.B.; Tan, L.S. ; Han, L.J.
191999Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parametersRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
201999Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2OChoi, W.K. ; Tan, L.S. ; Lim, J.Y.; Pek, S.G.