Please use this identifier to cite or link to this item:
|Title:||AlGaN/GaN high electron mobility transistors with implanted ohmic contacts||Authors:||Wang, H.T.
|Issue Date:||26-Mar-2007||Citation:||Wang, H.T., Tan, L.S., Chor, E.F. (2007-03-26). AlGaN/GaN high electron mobility transistors with implanted ohmic contacts. Thin Solid Films 515 (10) : 4476-4479. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.133||Abstract:||Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 °C in flowing N2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions. © 2006 Elsevier B.V. All rights reserved.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/81943||ISSN:||00406090||DOI:||10.1016/j.tsf.2006.07.133|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 17, 2019
WEB OF SCIENCETM
checked on Jun 10, 2019
checked on May 25, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.