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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Results 1-20 of 90 (Search time: 0.015 seconds).

Issue DateTitleAuthor(s)
12009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
22004Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealingTan, L.S. ; Wang, H.T.; Chor, E.F. 
326-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
41-Sep-1998Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47AsChor, E.F. ; Chong, W.K.; Heng, C.H. 
5Apr-1993Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistorsChor, E.F. ; Tan, L.S. 
620-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
71998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
82007Band offset measurements of the pulsed-laser-deposition-grown Sc 2O3 (111)/GaN (0001) heterostructure by X-ray photoelectron spectroscopyLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
91997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
10Jul-2003Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide filmsChoi, W.K. ; Shi, J. ; Chor, E.F. 
1118-Jul-1996Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blockingChor, E.F. ; Peng, C.J. 
12Dec-1993Compound emitter heterojunction bipolar transistorChor, E.F. ; Peng, C.J. 
131997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
14Jun-2010Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drainSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
1510-May-2006Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in siliconTan, C.F.; Chor, E.F. ; Lee, H.; Liu, J.; Quek, E.; Chan, L.
162000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
17May-2011Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contactsHUANG LEIHUA ; Chor, E.F. ; Wu, Y. 
1826-Mar-2007Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-GanLim, J.; Chor, E.F. ; Tan, L.S. 
191997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
202001Effects of electron-beam lithography on thin gate oxide reliabilityChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S.