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|Title:||Effects of electron-beam lithography on thin gate oxide reliability||Authors:||Chong, P.F.
|Issue Date:||2001||Citation:||Chong, P.F.,Cho, B.J.,Chor, E.F.,Joo, M.S. (2001). Effects of electron-beam lithography on thin gate oxide reliability. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 55-58. ScholarBank@NUS Repository.||Abstract:||The effects of E-beam lithography on thin gate oxide reliability were studied. For leakage currents and quasi-breakdown (QB) measurements, MOS capacitors on p-type silicon wafers with 3.5 and 4.5 nm gate oxides were used. Constant E-beam currents in the range of nA-μ were used to investigate the dependence of beam current on oxide degradation. Results confirm that E-beam lithography technologies can be implemented on thin oxide without significant impact on the long-term reliability.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/70097|
|Appears in Collections:||Staff Publications|
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