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https://scholarbank.nus.edu.sg/handle/10635/70097
| Title: | Effects of electron-beam lithography on thin gate oxide reliability | Authors: | Chong, P.F. Cho, B.J. Chor, E.F. Joo, M.S. |
Issue Date: | 2001 | Citation: | Chong, P.F.,Cho, B.J.,Chor, E.F.,Joo, M.S. (2001). Effects of electron-beam lithography on thin gate oxide reliability. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 55-58. ScholarBank@NUS Repository. | Abstract: | The effects of E-beam lithography on thin gate oxide reliability were studied. For leakage currents and quasi-breakdown (QB) measurements, MOS capacitors on p-type silicon wafers with 3.5 and 4.5 nm gate oxides were used. Constant E-beam currents in the range of nA-μ were used to investigate the dependence of beam current on oxide degradation. Results confirm that E-beam lithography technologies can be implemented on thin oxide without significant impact on the long-term reliability. | Source Title: | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | URI: | http://scholarbank.nus.edu.sg/handle/10635/70097 |
| Appears in Collections: | Staff Publications |
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