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|Title:||Effects of electron-beam lithography on thin gate oxide reliability|
|Citation:||Chong, P.F.,Cho, B.J.,Chor, E.F.,Joo, M.S. (2001). Effects of electron-beam lithography on thin gate oxide reliability. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 55-58. ScholarBank@NUS Repository.|
|Abstract:||The effects of E-beam lithography on thin gate oxide reliability were studied. For leakage currents and quasi-breakdown (QB) measurements, MOS capacitors on p-type silicon wafers with 3.5 and 4.5 nm gate oxides were used. Constant E-beam currents in the range of nA-μ were used to investigate the dependence of beam current on oxide degradation. Results confirm that E-beam lithography technologies can be implemented on thin oxide without significant impact on the long-term reliability.|
|Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA|
|Appears in Collections:||Staff Publications|
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