Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70097
Title: Effects of electron-beam lithography on thin gate oxide reliability
Authors: Chong, P.F.
Cho, B.J. 
Chor, E.F. 
Joo, M.S. 
Issue Date: 2001
Source: Chong, P.F.,Cho, B.J.,Chor, E.F.,Joo, M.S. (2001). Effects of electron-beam lithography on thin gate oxide reliability. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 55-58. ScholarBank@NUS Repository.
Abstract: The effects of E-beam lithography on thin gate oxide reliability were studied. For leakage currents and quasi-breakdown (QB) measurements, MOS capacitors on p-type silicon wafers with 3.5 and 4.5 nm gate oxides were used. Constant E-beam currents in the range of nA-μ were used to investigate the dependence of beam current on oxide degradation. Results confirm that E-beam lithography technologies can be implemented on thin oxide without significant impact on the long-term reliability.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/70097
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