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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70097
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dc.titleEffects of electron-beam lithography on thin gate oxide reliability
dc.contributor.authorChong, P.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorChor, E.F.
dc.contributor.authorJoo, M.S.
dc.date.accessioned2014-06-19T03:08:12Z
dc.date.available2014-06-19T03:08:12Z
dc.date.issued2001
dc.identifier.citationChong, P.F.,Cho, B.J.,Chor, E.F.,Joo, M.S. (2001). Effects of electron-beam lithography on thin gate oxide reliability. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 55-58. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70097
dc.description.abstractThe effects of E-beam lithography on thin gate oxide reliability were studied. For leakage currents and quasi-breakdown (QB) measurements, MOS capacitors on p-type silicon wafers with 3.5 and 4.5 nm gate oxides were used. Constant E-beam currents in the range of nA-μ were used to investigate the dependence of beam current on oxide degradation. Results confirm that E-beam lithography technologies can be implemented on thin oxide without significant impact on the long-term reliability.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page55-58
dc.identifier.isiutNOT_IN_WOS
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