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|Title:||Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films||Authors:||Choi, W.K.
|Issue Date:||Jul-2003||Citation:||Choi, W.K.,Shi, J.,Chor, E.F. (2003-07). Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (4) : 1415-1421. ScholarBank@NUS Repository.||Abstract:||The inductive coupled plasma etching of as-prepared and annealed hydrogenated amorphous silicon carbide films using CF4/O2 chemistry was analyzed. The etch rate of the as-prepared films was found to decrease with the decrease in the carbon content in the films. The infrared spectroscopy results show the effusion of hydrogen when the film was annealed.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/83534||ISSN:||10711023|
|Appears in Collections:||Staff Publications|
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