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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Results 21-40 of 84 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
212001Effects of microtrenching from polysilicon gate patterning on 0.13μm MOSFET device performanceChua, C.S.; Chor, E.F. ; Yu, J.; Pradeep, Y.; Chan, L.
222001Effects of plasma surface treatment on ohmic contact to n-GaNChor, E.F. ; Kang, X.J. 
231-Aug-2004Effects of surface plasma treatment on n-GaN ohmic contact formationLi, L.K.; Tan, L.S. ; Chor, E.F. 
242000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
251-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
26Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
7Dec-2000Electron-beam irradiation-induced gate oxide degradationCho, B.J. ; Chong, P.F.; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
826-Jun-2001Embedded polysilicon gate MOSFETCHAN, LAP; CHA, CHER LIANG; CHOR, ENG FONG ; HAO, GONG ; LEE, TECK KOON
91-May-2007Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxideLiu, C.; Chor, E.F. ; Tan, L.S. 
101999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
11Jun-2006Enhancing leakage suppression in carbon-rich silicon junctionsTan, C.F.; Chor, E.F. ; Lee, H.; Quek, E.; Chan, L.
122007Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser depositionLiu, C.; Chor, E.F. ; Tan, L.S. ; Du, A.
131999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
141-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
151998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
16Apr-2010Fabrication of single-walled carbon nanotube Schottky diode with gold contacts modified by asymmetric thiolate moleculesHuang, L. ; Chor, E.F. ; Wu, Y. ; Guo, Z.
172013Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 PassivationKyaw, L.M.; Liu, Y.; Bera, M.K.; Ngoo, Y.J.; Tripathy, S.; Chor, E.F. 
18Nov-1997Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitterChor, E.F. ; Peng, C.J. 
1920-Nov-2002ICP etching and structure study of PECVD SiC filmsShi, J. ; Choi, W.K. ; Chor, E.F. 
2020-Mar-2002ICP etching of RF sputtered and PECVD silicon carbide filmsShi, J. ; Chor, E.F. ; Choi, W.K.