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|Title:||Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitter||Authors:||Chor, E.F.
Energy band offset
Heterojunction bipolar transistor
Minority carrier reflection barrier
|Issue Date:||Nov-1997||Citation:||Chor, E.F.,Peng, C.J. (1997-11). Heterojunction bipolar transistor with an additional minority carrier reflection barrier in the emitter. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (11) : 6694-6698. ScholarBank@NUS Repository.||Abstract:||A heterojunction bipolar transistor (HBT) structure that provides an additional minority carrier reflection/confinement barrier within the quasi-neutral emitter region has been proposed and investigated by means of numerical simulations. The proposed device structure has been demonstrated to perform better than conventional HBTs - a higher current gain with better uniformity, which has been achieved without affecting the high frequency performance. In addition, the current gain was found to be relatively insensitive to temperature changes in the range of 250 K to 450 K, thus making the new device structure more suitable for high power applications.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/80523||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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