Full Name
BOURDILLON,ANTONY J
Variants
Bourdillon, Antony
Bourdillon, A.J.
BOURDILLON, ANTONY
Bourdillon, A.
 
 
 

Publications

Results 1-20 of 26 (Search time: 0.01 seconds).

Issue DateTitleAuthor(s)
17-Sep-2000A critical condition in Fresnel diffraction used for ultra-high resolution lithographic printingBourdillon, A.J. ; Boothroyd, C.B.; Kong, J.R. ; Vladimirsky, Y.
21997Analysis of coatings which inhibit epoxy bleeding in electronic packagingTan, N.X.; Lim, K.H.H.; Bourdillon, A.J. 
321-Nov-1999Demagnification in proximity X-ray lithography and extensibility to 25 nm by optimizing Fresnel diffractionVladimirsky, Y.; Bourdillon, A. ; Vladimirsky, O.; Jiang, W.; Leonard, Q.
42000Demagnification-by-bias in proximity X-ray lithographyRen, Kong Jong ; Leonard, Quinn; Vladimirsky, Yuli; Bourdillon, Antony 
5Jul-1995Displacement damage in supported YBa2Cu3O7-x thin films and finite-element simulationsBourdillon, A.J. ; Tan, N.X.
61998Elimination of 'bottom pinching' effect in environmentally stable chemically amplified resistSoo, C.P.; Fan, M.H.; Bourdillon, A.J. ; Chan, L.
71999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
81999Enhancement or reduction of catalytic dissolution reaction in chemically amplified resists by substrate contaminantsSoo, C.P.; Valiyaveettil, S. ; Huan, A. ; Wee, A. ; Ang, T.C.; Fan, M.H.; Bourdillon, A.J. ; Chan, L.H.
91-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
101-Mar-1996Hot isostatically pressed Bi2Sr2Ca2Cu3O10 coils made with novel precursorsBourdillon, A.J. ; Tan, N.X.; Ong, C.L.
111995Impact parameters and intraband scattering in electron diffraction from thin foilsBourdillon, A.J. 
12Jul-1999Improvement on lithography pattern profile by plasma treatmentSoo, C.P.; Bourdillon, A.J. ; Valiyaveettil, S. ; Huan, A. ; Wee, A. ; Fan, M.H.; Ang, T.C.; Chan, L.H.
13Aug-1996Interband scattering of channelled electrons suffering high energy lossesBourdillon, A.J. ; Cha, C.L.
141999Novel fiducial grid for X-ray masksSoo, C.P.; Chandra, S.; Kong, J.R. ; Bourdillon, A.J. ; Lu, B.
15Mar-1996Orientation anomalies in plating thickness measurements from advanced packaging substratesTan, N.X.; Lee, A.J.Y.; Bourdillon, A.J. ; Tan, C.Y.S.
161999Study of acid diffusion in a positive tone chemically amplified resist using an on-wafer imaging techniqueLu, B.; Taylor, J.W.; Cerrina, F.; Soo, C.P.; Bourdillon, A.J. 
171999Study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applicationsLim, C.W.; Bourdillon, A.J. ; Gong, H. ; Lahiri, S.K.; Pey, K.L.; Lee, K.H.
1819-Jul-1999Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporationCha, C.-L.; Chor, E.-F. ; Gong, H. ; Bourdillon, A.J. ; Jia, Y.-M.; Pan, J.-S. ; Zhang, A.-Q.; Chan, L.
191996Thermal stability in high-Tc coil and magnet design by process control of Bi(Pb)-2223/Ag multifilamentary tapesVo, N.V.; Neo, C.C.; Bourdillon, A.J. ; Dou, S.X.; Liu, H.K.
201-Mar-1999Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation processJia, Y.M.; Lim, C.W.; Bourdillon, A.J. ; Boothroyd, C.