Full Name
Pan Jisheng
Pan, J.-S.
Pan, J.S.
Pan, J.


Results 1-20 of 26 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
11-Jun-1997AES analysis of nitridation of Si(100) by 2-10 keV N+ 2 ion beamsPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
2Dec-1996AES analysis of silicon nitride formation by 10 keV N+ and N+ 2 ion implantationPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
3Aug-1997An FTIR and static SIMS study of the adsorption of propylene on Cu-ZSM-5 catalystsChen, L. ; Chen, H.Y.; Lin, J. ; Tan, K.L. ; Pan, J.S. 
410-Feb-2021Analysis of perovskite oxide etching using argon inductively coupled plasmas for photonics applicationsGuanyu Chen ; Eric Jun Hao Cheung ; Yu Cao ; Jisheng Pan ; Aaron J. Danner 
515-Mar-1996Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
615-Dec-1996Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardmentPan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
721-Sep-1997ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)Pan, J.S. ; Wee, A.T.S. ; Huan, C.H.A. ; Tan, H.S. ; Tan, K.L. 
8Nov-1998Atomic force microscopy investigation of the O2 +-induced surface topography of InPPan, J.S. ; Tay, S.T.; Huan, C.H.A. ; Wee, A.T.S. 
9Jul-1998Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAsPan, J.S. ; Huan, C.H.A. ; Wee, A.T.S. ; Tan, H.S. ; Tan, K.L. 
1022-Mar-2001Correlation between the corrosion behavior and corrosion films formed on the surfaces of Mg82-xNi18Ndx (x = 0, 5, 15) amorphous alloysYao, H.B.; Li, Y. ; Wee, A.T.S. ; Pan, J.S. ; Chai, J.W.
1126-Sep-2013Densification and strain hardening of a metallic glass under tension at room temperatureWang, Z.T.; Pan, J. ; Li, Y. ; Schuh, C.A.
1224-Jan-2013Desorption of ambient gas molecules and phase transformation of α-Fe2O3 nanostructures during ultrahigh vacuum annealingZhang, Z.; Lu, J.; Yun, T.; Zheng, M.; Pan, J. ; Sow, C.H. ; Tok, E.S. 
1315-Jul-1999Dynamics of hydrides on hydrogen-terminated silicon (111)-(1×1) surfaceYe, J.H.; Bok, T.H.; Pan, J.S. ; Li, S.F.Y. ; Lin, J.Y. 
14Apr-1999Effect of heat treatment on the corrosion behavior of amorphous Mg-Ni-Nd alloysKam, C.H.; Li, Y. ; Ng, S.C. ; Wee, A. ; Pan, J.S. ; Jones, H.
152013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
1614-Jul-2010Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substratesZhang, Z.; Pan, J.S. ; Zhang, J.; Tok, E.S. 
172000Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100) surfaces underneath the tip of a scanning tunneling microscopeMai, Z.H.; Lu, Y.F. ; Huang, S.M.; Chim, W.K. ; Pan, J.S. 
18Sep-1999Reversible phase transformation on Ge(111) surface by potentialYe, J.H.; Pan, J.S. ; Liu, J.G.; Li, S.F.Y. 
191-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. 
2019-Jul-1999Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporationCha, C.-L.; Chor, E.-F. ; Gong, H. ; Bourdillon, A.J. ; Jia, Y.-M.; Pan, J.-S. ; Zhang, A.-Q.; Chan, L.