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|Title:||Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100) surfaces underneath the tip of a scanning tunneling microscope||Authors:||Mai, Z.H.
|Issue Date:||2000||Citation:||Mai, Z.H.,Lu, Y.F.,Huang, S.M.,Chim, W.K.,Pan, J.S. (2000). Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100) surfaces underneath the tip of a scanning tunneling microscope. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18 (4) : 1853-1857. ScholarBank@NUS Repository.||Abstract:||Laser-induced nanomodification on hydrogen (H)-passivated Si(100) surfaces has been carried out underneath the tip of a scanning tunneling microscope (STM) in ambient air. The created features were characterized using STM, atomic-force microscopy (AFM), and Auger electron spectroscopy (AES). The features appeared as depressed regions in STM images, while they appeared as protruded regions in AFM images. Oxygen was detected in a modified 2×2 μm2 square region by AES, while no oxygen was detected elsewhere on the same sample surface. The experiment results and mechanism are discussed. Nano-oxide patterns, such as lines and dots, have been created. Dependence of oxide apparent depth on laser intensity, laser pulse numbers, tunneling current during modification, and laser incidence angle has been investigated. © 2000 American Vacuum Society.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/80708||ISSN:||10711023|
|Appears in Collections:||Staff Publications|
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