Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1390867
Title: Reversible phase transformation on Ge(111) surface by potential
Authors: Ye, J.H.
Pan, J.S. 
Liu, J.G.
Li, S.F.Y. 
Issue Date: Sep-1999
Citation: Ye, J.H., Pan, J.S., Liu, J.G., Li, S.F.Y. (1999-09). Reversible phase transformation on Ge(111) surface by potential. Electrochemical and Solid-State Letters 2 (9) : 448-451. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1390867
Abstract: Reversible phase transformation on atomically flat Ge(111) induced by potential in 40% NH4F solution has been observed with in situ scanning tunneling microscope. The abrupt change in Ge surface morphology as a function of the potential is attributed to the phase transformation, where small terraces are converted into large terraces as the potential is changed from -1.32 to -0.98 V. Cyclic voltammograms show that the charge under the cathodic peak is almost the same as that under the anodic peak (4.2×10-4 C/cm2). Combined with ex situ X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy results, we conclude that Ge(111) surface is terminated by a monolayer hydroxide or hydride depending on the applied potential. The formation of hydroxide-terminated Ge(111) is likely to occur at -0.98 V, far away from the anodic peak in the cyclic voltammogram. This fact suggests that the reversible phase transformation between monolayer hydrogen- and hydroxyl-capped Ge(111) surface is induced by potential. An atomically flat Ge(111) surface prepared with wet cleaning provides an attractive substrate for epitaxial growth of compound semiconductors.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/113225
ISSN: 10990062
DOI: 10.1149/1.1390867
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