Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1390867
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dc.titleReversible phase transformation on Ge(111) surface by potential
dc.contributor.authorYe, J.H.
dc.contributor.authorPan, J.S.
dc.contributor.authorLiu, J.G.
dc.contributor.authorLi, S.F.Y.
dc.date.accessioned2014-11-30T06:41:09Z
dc.date.available2014-11-30T06:41:09Z
dc.date.issued1999-09
dc.identifier.citationYe, J.H., Pan, J.S., Liu, J.G., Li, S.F.Y. (1999-09). Reversible phase transformation on Ge(111) surface by potential. Electrochemical and Solid-State Letters 2 (9) : 448-451. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1390867
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113225
dc.description.abstractReversible phase transformation on atomically flat Ge(111) induced by potential in 40% NH4F solution has been observed with in situ scanning tunneling microscope. The abrupt change in Ge surface morphology as a function of the potential is attributed to the phase transformation, where small terraces are converted into large terraces as the potential is changed from -1.32 to -0.98 V. Cyclic voltammograms show that the charge under the cathodic peak is almost the same as that under the anodic peak (4.2×10-4 C/cm2). Combined with ex situ X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy results, we conclude that Ge(111) surface is terminated by a monolayer hydroxide or hydride depending on the applied potential. The formation of hydroxide-terminated Ge(111) is likely to occur at -0.98 V, far away from the anodic peak in the cyclic voltammogram. This fact suggests that the reversible phase transformation between monolayer hydrogen- and hydroxyl-capped Ge(111) surface is induced by potential. An atomically flat Ge(111) surface prepared with wet cleaning provides an attractive substrate for epitaxial growth of compound semiconductors.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1390867
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1149/1.1390867
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume2
dc.description.issue9
dc.description.page448-451
dc.description.codenESLEF
dc.identifier.isiut000081460900010
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